sot89 npn silicon planar medium power transistors issue 3 C february 1996 j partmarking details:- BCX54 C ba BCX54-10 C bc BCX54-16 C bd bcx55 C be bcx55-10 C bg bcx55-16 C bm bcx56 C bh bcx56-10 C bk bcx56-16 C bl complementary types:- BCX54 C bcx51 bcx55 C bcx52 bcx56 C bcx53 absolute maximum ratings. parameter symbol BCX54 bcx55 bcx56 unit collector-base voltage v cbo 45 60 100 v collector-emitter voltage v ceo 45 60 80 v emitter-base voltage v ebo 5v peak pulse current i cm 2a continuous collector current i c 1a power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -65 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage BCX54 bcx55 bcx56 v (br)cbo 45 60 100 v i c =100 ma collector-emitter breakdown voltage BCX54 bcx55 bcx56 v (br)ceo 45 60 80 vi c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =10 ma collector cut-off current i cbo 0.1 20 ma ma v cb =30v v cb =30v, t amb =150c emitter cut-off current i ebo 20 na v eb =4v collector-emitter saturation voltage v ce(sat) 0.5 v i c =500ma, i b =50ma* base-emitter turn-on voltage v be(on) 1.0 v i c =500ma, v ce =2v* static forward current transfer ratio h fe C10 C16 25 40 25 63 100 250 160 250 i c =5ma, v ce =2v* i c =150ma, v ce =2v* i c =500ma, v ce =2v* i c =150ma, v ce =2v* i c =150ma, v ce =2v* transition frequency f t 150 mhz i c =50ma, v ce =10v, f=100mhz output capacitance c obo 15 pf v cb =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% BCX54 bcx55 bcx56 c c b e 3 - 35
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